Probleme und Grenzen beim Einsatz abschaltbarer Thyristoren = Problèmes et limites de l'utilisation des thyristors interrupteurs = Problems and limits in the application of GTO thyristorsZIMMERMANN, W.ETZ-Archiv. 1984, Vol 6, Num 5, pp 189-194, issn 0170-1703Article

A novel gate-cathode configuration with two interdigitation levels for GTO thyristorsSILARD, A; RUSU, S.IEEE electron device letters. 1983, Vol 4, Num 6, pp 188-190, issn 0741-3106Article

The gate-turnoff thyristor (GTO)BECHTELER, M.Siemens Forschungs- und Entwicklungsberichte. 1985, Vol 14, Num 2, pp 39-44, issn 0370-9736Article

Capacitor switched gate-turnoff thyristorHUANG, Q; AMARATUNGA, G. A. J.IEE proceedings. Part G. Circuits devices and systems. 1993, Vol 140, Num 2, pp 85-90, issn 0956-3768Article

Design considerations for p-i-n thyristor structuresRANADEEP DUTTA; ROTHWARF, A.IEEE transactions on power electronics. 1992, Vol 7, Num 2, pp 430-435, issn 0885-8993Article

The utility requirements for a distribution fault current limiter. DiscussionSLADE, P. G; WU, J. L; STACEY, E. J et al.IEEE transactions on power delivery. 1992, Vol 7, Num 2, pp 507-515, issn 0885-8977Conference Paper

Kondensator-Löschschaltung mit Löschthyristor-Wechselwegpaar = Un circuit de commutation à condensateur avec paire anti-parallèle de thyristor interrupteur = A capacitor switching circuit with antiparallel GTO thyristorsNESTLER, J.ETZ-Archiv. 1984, Vol 6, Num 12, pp 407-414, issn 0170-1703Article

Controlled turn-on thyristorsTEMPLE, V. A. K.I.E.E.E. transactions on electron devices. 1983, Vol 30, Num 7, pp 816-824, issn 0018-9383Article

A new gate drive circuit for high-speed operation of GTO thyristorsBUM-SEOK SUH; DONG-SEOK HYUN.IEEE transactions on industrial electronics (1982). 1995, Vol 42, Num 2, pp 159-163, issn 0278-0046Article

Ondulateur de courant à GTO appliqué au chauffage par induction à forte puissance et moyenne fréquence = GTO current-source inverter for high-power medium-frequency induction heating applicationNUNS, J; PEUREUX, J. L.Revue générale de l'électricité (Paris). 1992, Num 6, pp 68-72, issn 0035-3116Article

Adjustable-speed drive retrofit for Ormond Beach FD fansOLIVER, J. A; MCCLUSKEY, R. K; WEISS, H. W et al.IEEE transactions on energy conversion. 1992, Vol 7, Num 3, pp 580-588, issn 0885-8969Article

The TIL GTO thyristor―a power switch with unique turn-off featuresSILARD, A; RUSU, S.IEEE electron device letters. 1983, Vol 4, Num 10, pp 347-349, issn 0741-3106Article

Thyristors interrupteurs de puissanceAYAZYAN, R. EH.Èlektrotehnika (Moskva, 1963). 1984, Num 3, pp 5-11, issn 0013-5860Article

Convertisseurs de fréquence statiques de haute puissance pour le trafic ferroviaire à travers les Alpes = High power frequency static converters for railway traffic across the AlpesGAUPP, O; LINHOFER, G; LOCHNER, G et al.Revue ABB. 1995, Num 5, pp 4-10, issn 1013-3127Article

Les composants de forte puissance, le thyristor GTO = High power components, the GTO thyristorPASCAL, J. P; COQUERY, G.Revue générale de l'électricité (Paris). 1992, Num 5, pp 14-21, issn 0035-3116Article

High-power, TIL-type gate-assisted turn-off thyristorsSILARD, A; TURTUDAU, F; MARGARIT, M et al.International journal of electronics. 1986, Vol 60, Num 3, pp 347-359, issn 0020-7217Article

A novel concept for gate turn-off thyristorsSILARD, A; CERCELARU, S; UDREA, F et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1992, Vol 37, Num 2, pp 201-203, issn 0035-4066Article

GTO thyristorsAZUMA, M; KURATA, M.Proceedings of the IEEE. 1988, Vol 76, Num 4, pp 419-427, issn 0018-9219Article

GTO with monolithic antiparallel diodeHUANG, E; BARNES, J. R.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 6, pp 245-247, issn 0143-7100Article

Influence de la surface du shunt anodique sur les paramètres d'un dinistor interrupteurAVKSENT'EV, V. L; GREKHOV, I. V; ELENSKIJ, V. A et al.Èlektrotehnika (Moskva, 1963). 1988, Num 5, pp 35-38, issn 0013-5860Article

High-speed snubberless operation of GTOs using a new gate drive techniqueWIRTH, W. F.IEEE transactions on industry applications. 1988, Vol 24, Num 1, pp 127-131, issn 0093-9994Conference Paper

GATE TURN-OFF THYRISTORSIKEDA Y.1982; HITACHI REV.; ISSN 0018-277X; JPN; DA. 1982; VOL. 31; NO 4; PP. 169-172; BIBL. 3 REF.Article

ONE-DIMENSIONAL ANALYSIS OF TURNOFF PHENOMENA FOR A GATE TURNOFF THYRISTORNAITO M; NAGAND T; FUKUI H et al.1979; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 226-231; BIBL. 16 REF.Article

Development of a ±100 MVAR static condenser for voltage control of transmission systems. DiscussionSCHAUDER, C; GERNHARDT, M; STACEY, E et al.IEEE transactions on power delivery. 1995, Vol 10, Num 3, pp 1486-1496, issn 0885-8977Conference Paper

Représentation distribuée de la dynamique des charges dans la base large des thyristors «Gate-Turn-Off». Application à un modèle de G.T.O. pour la C.A.O. des circuits = Distributed representation of the charge dynamics in the wide base of the «Gate-Turn-Off» thyristors. Application to a G.T.O. model for circuits C.A.DKallala, Mohamed Adel; Leturcq, P.1994, 115 p.Thesis